EVIDENCE FOR THE DEFECT POOL CONCEPT FOR SI DANGLING BOND STATES IN A-SI-H FROM EXPERIMENTS WITH THIN-FILM TRANSISTORS

被引：24

作者：

POWELL, MJ

FRENCH, ID

HUGHES, JR

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90676-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：642 / 644

页数：3

共 11 条

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