EVIDENCE FOR VACANCIES IN AMORPHOUS-SILICON

被引：52

作者：

VANDENHOVEN, GN ^{[1
]}

LIANG, ZN ^{[1
]}

NIESEN, L ^{[1
]}

CUSTER, JS ^{[1
]}

机构：

[1] MAT SCI CTR,ALGEMENE NAT KUNDE LAB,9718 CM GRONINGEN,NETHERLANDS

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.68.3714

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The microscopic nature of defects in ion-implanted amorphous Si has been probed using Mossbauer spectroscopy. Analysis of the Sn-119 Mossbauer spectra obtained from Sb-119 in amorphous Si requires two independent sites for Sb in amorphous Si. Direct comparison of the isomer shifts and Debye temperatures of these lines with data from crystal Si demonstrates that the sites are a substitutional network site and an Sb-vacancy complex. The data suggest that point defects analogous to the crystal vacancy exist in the amorphous Si structure.

引用

页码：3714 / 3717

页数：4

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