PHOTOCAPACITANCE AND LUMINESCENCE STUDIES OF CHARGE-TRANSFER AND INTERNAL TRANSITIONS OF CU IN CDSXSE1-X

被引：4

作者：

KULLENDORFF, N ^{[1
]}

SAMUELSON, L ^{[1
]}

GROSSMANN, G ^{[1
]}

机构：

[1] UNIV LUND,DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 28期

关键词：

D O I：

10.1088/0022-3719/17/28/021

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5055 / 5065

页数：11

共 10 条

[1] PHOTO-LUMINESCENCE EXCITATION SPECTROSCOPY OF 3D TRANSITION-METAL IONS IN GAP AND ZNSE [J].

BISHOP, SG ;

DEAN, PJ ;

PORTEOUS, P ;

ROBBINS, DJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (07) :1331-1340

[2] FINE STRUCTURE OF INFRARED ABSORPTION AND EMISSION SPECTRA OF CU2+ IN ZNS AND CDS CRYSTALS [J].

BROSER, I ;

MAIER, H ;

SCHULZ, HJ .

PHYSICAL REVIEW, 1965, 140 (6A) :2135-+

[3] PHOTOCAPACITANCE STUDIES OF CDS-CU [J].

GRIMMEISS, HG ;

KULLENDORFF, N ;

BROSER, R .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3405-3412

[4] FUNDAMENTALS OF JUNCTION MEASUREMENTS IN THE STUDY OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS [J].

GRIMMEISS, HG ;

OVREN, C .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (09) :1032-1042

[5] DEEP LEVEL JUNCTION SPECTROSCOPY OF II-VI-COMPOUNDS [J].

GRIMMEISS, HG .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :40-50

[6]

GRIMMEISS HG, 1981, J APPL PHYS, V51, P5852

[7]

HARTMANN H, 1982, CURRENT TOPICS MATER, V9, P1

[8] DEEP LEVEL TRANSIENT SPECTROSCOPY EVALUATION OF NON-EXPONENTIAL TRANSIENTS IN SEMICONDUCTOR ALLOYS [J].

OMLING, P ;

SAMUELSON, L ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5117-5122

[9] PREPARATION OF GRADED-BAND-GAP SINGLE CRYSTALS OF II-VI COMPOUNDS [J].

REIMERS, P .

PHYSICA STATUS SOLIDI, 1969, 35 (02) :707-&

[10] PHOTOLUMINESCENCE IN AL-DOPED CDS CRYSTALS [J].

SUSA, N ;

WATANABE, H ;

WADA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (11) :1733-1737

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