HIGH-INJECTION CONDITIONS AT DISLOCATIONS IN SILICON - A MECHANISM FOR DEPENDENCE OF LIFETIME ON PHOTOGENERATION RATE

被引：5

作者：

MBEWE, DJ

THOMSON, DJ

MCLEOD, RD

CARD, HC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 05期

关键词：

D O I：

10.1109/T-ED.1984.21563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：523 / 527

页数：5

共 22 条

[1] NON-LINEAR BEHAVIOR OF THE SHORT-CIRCUIT CURRENT OF A SOLAR-CELL WITH MINORITY-CARRIER LIFETIME DEPENDENT ON THE LIGHT-INTENSITY [J].

AUGELLI, V ;

VASANELLI, L ;

LEO, M ;

LEO, RA ;

SOLIANI, G .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1558-1562

[2] DESIGN CONSIDERATIONS FOR HIGH-INTENSITY SOLAR-CELLS [J].

DALAL, VL ;

MOORE, AR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1244-1251

[3] TRAP SATURATION IN SILICON SOLAR CELLS [J].

FABRE, E ;

MAUTREF, M ;

MIRCEA, A .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :239-241

[4]

FONASH SJ, 1981, SOLAR CELL DEVICE PH, P166

[5] THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J].

FOSSUM, JG ;

LINDHOLM, FA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :692-700

[6] HIGH-EFFICIENCY SILICON MINMIS SOLAR-CELLS - DESIGN AND EXPERIMENTAL RESULTS [J].

GODFREY, RB ;

GREEN, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :737-745

[7] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[8] DANGLING BONDS AND DISLOCATIONS IN SEMICONDUCTORS [J].

HEINE, V .

PHYSICAL REVIEW, 1966, 146 (02) :568-&

[9] EFFECT OF SHORT WAVELENGTH ILLUMINATION ON THE CHARACTERISTIC BULK DIFFUSION LENGTH IN RIBBON SILICON SOLAR-CELLS [J].

HO, CT ;

MATHIAS, JD .

SOLID-STATE ELECTRONICS, 1981, 24 (02) :115-120

[10] ENHANCEMENT OF DIFFUSION LENGTH IN EFG RIBBON SOLAR-CELLS UNDER ILLUMINATION [J].

HO, CT ;

BELL, RO ;

WALD, FV .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :463-465

← 1 2 3 →