LAMBDA-ALMOST-EQUAL-TO 1.5-MU-M INGAASP RIDGE LASERS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引:16
作者
TEMKIN, H
PANISH, MB
LOGAN, RA
VANDERZIEL, JP
机构
关键词
D O I
10.1063/1.95258
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:330 / 332
页数:3
相关论文
共 13 条
[1]   OPTICALLY PUMPED 1.55-MU-M DOUBLE HETEROSTRUCTURE GAXALYIN1-X-YAS/ALUIN1-UAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ALAVI, K ;
TEMKIN, H ;
WAGNER, WR ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1983, 42 (03) :254-256
[2]   NEAR ROOM-TEMPERATURE CW OPERATION AT 1.70 MU-M OF MBE GROWN INGAAS-INP DH LASERS [J].
ASAHI, H ;
KAWAMURA, Y ;
IKEDA, M ;
OKAMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L187-L190
[3]   PERFORMANCE OF AN IMPROVED INGAASP RIDGE WAVE-GUIDE LASER AT 1.3-MU-M [J].
KAMINOW, IP ;
NAHORY, RE ;
STULZ, LW ;
DEWINTER, JC .
ELECTRONICS LETTERS, 1981, 17 (09) :318-320
[4]  
LINKE RA, 1984, J LIGHTWAVE TECHNOL, V2, P40
[5]   GAIN SPECTRA OF QUATERNARY SEMICONDUCTORS [J].
OSINSKI, M ;
ADAMS, MJ .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (06) :229-236
[6]   GAS SOURCE MOLECULAR-BEAM EPITAXY OF GAXIN1-XPYAS1-Y [J].
PANISH, MB ;
SUMSKI, S .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3571-3576
[7]   GAINASP INP HETEROSTRUCTURE LASERS EMITTING AT 1.5-MU-M AND GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
PANISH, MB ;
TEMKIN, H .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :785-787
[8]   1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
TEMKIN, H ;
ALAVI, K ;
WAGNER, WR ;
PEARSALL, TP ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1983, 42 (10) :845-847
[9]   INFLUENCE OF ORIENTATION DEPENDENT GROWTH-KINETICS ON THE PERFORMANCE OF INGAASP BURIED CRESCENT LASERS [J].
TEMKIN, H ;
LOGAN, RA ;
VANDERZIEL, JP .
APPLIED PHYSICS LETTERS, 1984, 44 (02) :160-162
[10]   NEW CURRENT INJECTION 1.5-MU-M WAVELENGTH GAXALYIN1-X-YAS/INP DOUBLE-HETEROSTRUCTURE LASER GROWN BY MOLECULAR-BEAM EPITAXY [J].
TSANG, WT ;
OLSSON, NA .
APPLIED PHYSICS LETTERS, 1983, 42 (11) :922-924