SELECTIVE MOVPE OF SEMIINSULATING INP LAYERS FOR HIGH-SPEED OEICS

MOVPE growth on patterned substrates and doping behaviour of iron in InP were studied at different rector pressures. The key parameters for a successful control of selective MOVPE like the growth temperature, growth rate, reactor pressure and the ratio of coated to uncoated surface are discussed. Dry and wet chemical etched structures were overgrown to get basic information for designing high speed OEIC structures. For low pressure growth, a reduced Fe incorporation and a drastically lowered diffusion tendency towards the layer/substrate interface was observed by SIMS profiles in contrast to atmospheric pressure growth as well as a strong interaction between zinc and iron regarding diffusion behaviour.