ANALYSIS OF LEAKAGE CURRENT IN BURIED HETEROSTRUCTURE LASERS WITH SEMIINSULATING BLOCKING LAYERS

被引：36

作者：

ASADA, S ^{[1
]}

SUGOU, S ^{[1
]}

KASAHARA, KI ^{[1
]}

KUMASHIRO, S ^{[1
]}

机构：

[1] NEC CORP,DIV VLSI CAD ENGN,KAWASAKI 211,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 06期

关键词：

D O I：

10.1109/3.29269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1362 / 1368

页数：7

共 29 条

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[5] SEMI-INSULATING PROPERTIES OF FE-IMPLANTED INP .1. CURRENT-LIMITING PROPERTIES OF N+-SEMI-INSULATING-N+ STRUCTURES
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 1780 - 1786
[6] LOW-THRESHOLD AND WIDE-BANDWIDTH 1.3-MU-M INGAASP BURIED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT CONFINEMENT LAYERS
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URE, JW
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (03) : 155 - 157
[7] INGAASP LASER WITH SEMIINSULATING CURRENT CONFINING LAYERS
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ACKERMAN, DA
SHEN, TM
NAPHOLTZ, SG
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1572 - 1573
[8] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS
FORREST, SR
SCHMIDT, PH
WILSON, RB
KAPLAN, ML
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201
[9] STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP
FUNG, S
NICHOLAS, RJ
STRADLING, RA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5145 - 5155
[10] COMPUTER-AIDED ANALYSIS OF GAAS N-I-N STRUCTURES WITH A HEAVILY COMPENSATED I-LAYER
HORIO, K
IKOMA, T
YANAI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) : 1242 - 1250

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