EFFECTS OF A BURIED PARA-LAYER ON ALPHA-PARTICLE IMMUNITY OF MESFETS FABRICATED ON SEMIINSULATING GAAS SUBSTRATES

被引：16

作者：

UMEMOTO, Y ^{[1
]}

MASUDA, N ^{[1
]}

MITSUSADA, K ^{[1
]}

机构：

[1] HITACHI LTD,CTR DEVICE DEV,KODAIRA,TOKYO 187,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 06期

关键词：

D O I：

10.1109/EDL.1986.26412

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：396 / 397

页数：2

共 8 条

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[8] GAAS-MESFETS WITH A BURIED P-LAYER FOR LARGE-SCALE INTEGRATION [J].

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