THE ZERO-PHONON LUMINESCENCE FROM GOLD IN SILICON

被引：10

作者：

THEBAULT, D

BARRAU, J

BROUSSEAU, M

THANH, DX

BRABANT, JC

VOILLOT, F

RIBAULT

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(83)90446-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：645 / 647

页数：3

共 5 条

[1] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS
GRIMMEISS, HG
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 341 - 376
[2] MULTIVALLEY SPIN SPLITTING OF 1S STATES FOR SULFUR, SELENIUM, AND TELLURIUM DONORS IN SILICON
GRIMMEISS, HG
JANZEN, E
LARSSON, K
[J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2627 - 2632
[3] LANG DV, 1980, PHYS REV B, V22, P7
[4] PHOTO-LUMINESCENCE FROM GOLD CENTER IN SILICON
MAZZASCHI, J
BRABANT, JC
BROUSSEAU, B
BARRAU, J
BROUSSEAU, M
VOILLOT, F
BACUVIER, P
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (10) : 1091 - 1092
[5] ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS
VANVECHTEN, JA
THURMOND, CD
[J]. PHYSICAL REVIEW B, 1976, 14 (08): : 3539 - 3550