A MODEL OF TRANSIENT RADIATION EFFECTS IN GAAS STATIC RAM CELLS

被引：4

作者：

BROWN, AT ^{[1
]}

MASSENGILL, LW ^{[1
]}

DIEHL, SE ^{[1
]}

HAUSER, JR ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1519 / 1523

页数：5

共 12 条

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[9] A STUDY OF SINGLE EVENTS IN GAAS SRAMS [J].

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[10] COMPARISONS OF SINGLE EVENT VULNERABILITY OF GAAS SRAMS [J].

WEATHERFORD, TR ;

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1590-1596

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