THE RELATIONSHIP BETWEEN ETCH PIT DENSITY AND DISLOCATION DENSITY FOR (001)GAAS

被引：13

作者：

STIRLAND, DJ

REES, GJ

RITSON, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 79卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90482-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：493 / 502

页数：10

共 10 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2] DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

CHEN, RT ;

HOLMES, DE .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) :111-124

[3]

CLARK S, 1981, I PHYS C SER, V60, P339

[4] DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J].

GRABMAIER, JG ;

WATSON, CB .

PHYSICA STATUS SOLIDI, 1969, 32 (01) :K13-+

[5] THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFETS FABRICATED ON LEC-GROWN SEMI-INSULATING SUBSTRATES [J].

ISHII, Y ;

MIYAZAWA, S ;

ISHIDA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :800-804

[6] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J].

LIDA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :768-&

[7] UNIFORMITY EVALUATION OF MESFETS FOR GAAS LSI FABRICATION [J].

MATSUOKA, Y ;

OHWADA, K ;

HIRAYAMA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1062-1067

[8]

RITSON A, 1985, UNPUB

[9]

Stirland D. J., 1984, Semi-Insulating III-V materials, P91

[10]

Stirland D.J., 1977, I PHYS C SER A, V33, P150

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