THERMAL PROFILES AND THERMAL-STRESSES INTRODUCED ON SILICON DURING SCANNING LINE SHAPED BEAM ANNEALING

被引：8

作者：

CORRERA, L

BENTINI, GG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 08期

关键词：

D O I：

10.1063/1.332668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4330 / 4337

页数：8

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