A COMPARISON BETWEEN THERMAL ANNEALING AND ION MIXING OF ALLOYED NI-W FILMS ON SI .1.

被引：17

作者：

PAI, CS

LAU, SS

POKER, DB

HUNG, LS

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

[2] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.335549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4172 / 4177

页数：6

相关论文

共 10 条

[1] FORMATION OF SHALLOW SILICIDE CONTACTS OF HIGH SCHOTTKY-BARRIER ON SI - ALLOYING PD AND PT WITH W VS ALLOYING PD AND PT WITH SI
EIZENBERG, M
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1577 - 1585
[2] MARKER EXPERIMENTS IN GROWTH-STUDIES OF NI2SI, PD2SI, AND CRSI2 FORMED BOTH BY THERMAL ANNEALING AND BY ION MIXING
HUNG, LS
MAYER, JW
PAI, CS
LAU, SS
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1527 - 1536
[3] ION-INDUCED SILICIDE FORMATION IN NIOBIUM THIN-FILMS
MATTESON, S
ROTH, J
NICOLET, MA
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 217 - 226
[4] NICOLET MA, 1983, VLSI ELECTRONICS MIC, V6, pCH6
[5] PHASE-SEPARATION IN ALLOY-SI INTERACTION
OTTAVIANI, G
TU, KN
MAYER, JW
TSAUR, BY
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 331 - 333
[6] A COMPARISON BETWEEN THERMAL ANNEALING AND ION MIXING OF MULTILAYERED NI-W FILMS ON SI .2.
PAI, CS
LAU, SS
POKER, DB
HUNG, LS
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4178 - 4185
[7] RECOIL IMPLANTATION AND ION-BEAM-INDUCED COMPOSITION CHANGES IN ALLOYS AND COMPOUNDS
SIGMUND, P
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7261 - 7263
[8] TSAUR BY, 1980, P S THIN FILM INTERF, V80, P205
[9] Tu K.N., 1974, J APPL PHYS S, V2, P669
[10] REACTION OF AMORPHOUS NI-W AND NI-N-W FILMS WITH SUBSTRATE SILICON
ZHU, MF
SUNI, I
NICOLET, MA
SANDS, T
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2740 - 2745