RESONANT TUNNELING THROUGH A SYMMETRICAL TRIPLE-BARRIER STRUCTURE

被引:16
作者
LEO, J
TOOMBS, GA
机构
[1] Department of Physics, University of Nottingham
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 12期
关键词
D O I
10.1103/PhysRevB.43.9944
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We consider tunneling of electrons through a triple-barrier structure. We focus our attention on the transmission coefficient T when the incident energy of the electrons is resonant with one of the quasibound energy levels of the structure. Although it is widely recognized that for a symmetric double-barrier structure T goes to unity at resonance, we shall show that this is not always the case for a symmetric triple-barrier structure in which the external barriers are half the width of the internal barrier.
引用
收藏
页码:9944 / 9946
页数:3
相关论文
共 8 条
[1]   PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J].
BROEKAERT, TPE ;
LEE, W ;
FONSTAD, CG .
APPLIED PHYSICS LETTERS, 1988, 53 (16) :1545-1547
[2]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[3]   LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS [J].
GOODHUE, WD ;
SOLLNER, TCLG ;
LE, HQ ;
BROWN, ER ;
VOJAK, BA .
APPLIED PHYSICS LETTERS, 1986, 49 (17) :1086-1088
[4]   OBSERVATION OF A NEGATIVE DIFFERENTIAL RESISTANCE DUE TO TUNNELING THROUGH A SINGLE BARRIER INTO A QUANTUM-WELL [J].
MORKOC, H ;
CHEN, J ;
REDDY, UK ;
HENDERSON, T ;
LURYI, S .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :70-72
[5]   OBSERVATION OF RESONANT TUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J].
NAKAGAWA, T ;
IMAMOTO, H ;
KOJIMA, T ;
OHTA, K .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :73-75
[6]   RESONANT TUNNELLING THROUGH A SYMMETRIC DOUBLE WELL [J].
PAYNE, MC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (27) :L879-L883
[7]   PHYSICS OF RESONANT TUNNELING - THE ONE-DIMENSIONAL DOUBLE-BARRIER CASE [J].
RICCO, B ;
AZBEL, MY .
PHYSICAL REVIEW B, 1984, 29 (04) :1970-1981
[8]  
TOOMBS GA, 1990, ELECTRONIC PROPERTIE, P257