LOW-TEMPERATURE DIFFUSIVITY AND PRECIPITATION OF PHOSPHORUS IN SILICON

被引：46

作者：

MORETTINI, L ^{[1
]}

NOBILI, D ^{[1
]}

机构：

[1] CNR,INST LAMEL,I-40126 BOLOGNA,ITALY

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1984年 / 10卷 / 01期

关键词：

D O I：

10.1016/0254-0584(84)90075-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：21 / 30

页数：10

共 17 条

[1]

ARMIGLIATO A, 1977, J APPL PHYS, V47, P5489

[2] APPLICATION OF LIFSHITZ-SLYOZOV THEORY TO PRECIPITATION OF PHOSPHORUS IN SILICON-GERMANIUM THERMOELECTRIC ALLOYS [J].

BURGESS, EL ;

NASBY, RD .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2375-2381

[3] LATTICE-PARAMETER STUDY OF SILICON UNIFORMLY DOPED WITH BORON AND PHOSPHORUS [J].

CELOTTI, G ;

NOBILI, D ;

OSTOJA, P .

JOURNAL OF MATERIALS SCIENCE, 1974, 9 (05) :821-828

[4] INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS [J].

COCKAYNE, DJ ;

RAY, ILF ;

WHELAN, MJ .

PHILOSOPHICAL MAGAZINE, 1969, 20 (168) :1265-&

[5] STABILITY OF SHAPE OF A SOLID CYLINDER GROWING IN A DIFFUSION FIELD [J].

CORIELL, SR ;

PARKER, RL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) :632-&

[6] PRECIPITATION OF PHOSPHORUS FROM SOLID SOLUTION IN GE-SI ALLOY [J].

EKSTROM, L ;

DISMUKES, JP .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (05) :857-&

[7] ELECTRICAL-PROPERTIES AND STABILITY OF SUPERSATURATED PHOSPHORUS-DOPED SILICON LAYERS [J].

FINETTI, M ;

NEGRINI, P ;

SOLMI, S ;

NOBILI, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1313-1317

[8] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J].

HAM, FS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) :335-351

[9] DIFFUSION-LIMITED GROWTH OF PRECIPITATE PARTICLES [J].

HAM, FS .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) :1518-1525

[10]

HU SM, J APPL PHYS

← 1 2 →