SUBTHRESHOLD VELOCITY-FIELD CHARACTERISTICS FOR BULK AND EPITAXIAL INP

被引：19

作者：

MAJERFELD, A ^{[1
]}

POTTER, KE ^{[1
]}

ROBSON, PN ^{[1
]}

机构：

[1] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, SHEFFIELD S1 3JD, ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.1663836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3681 / 3682

页数：2

共 13 条

[1] HIGH-FIELD TRANSPORT IN INDIUM PHOSPHIDE [J].

FAWCETT, W ;

HERBERT, DC .

ELECTRONICS LETTERS, 1973, 9 (14) :308-309

[2] MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE INP [J].

GLOVER, GH .

APPLIED PHYSICS LETTERS, 1972, 20 (06) :224-&

[3]

Hilsum C., 1973, Physica Status Solidi B, V56, pK93, DOI 10.1002/pssb.2220560252

[4] GEOMETRICAL MAGNETORESISTANCE AND HALL MOBILITY IN GUNN EFFECT DEVICES [J].

JERVIS, TR ;

JOHNSON, EF .

SOLID-STATE ELECTRONICS, 1970, 13 (02) :181-&

[5] ELECTRICAL CHARACTERISTICS OF BULK N-INP OSCILLATORS [J].

KAUL, R ;

GRUBIN, HL ;

BERAK, JM ;

LADD, GO .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (08) :988-&

[6]

LAM HT, 1971, ELECTRON LETT, V7, P722

[7]

NIELSEN LD, 1972, SOLID STATE COMMUN, V10, P169

[8] MICROWAVE MEASUREMENT OF ELECTRON DRIFT VELOCITY IN INDIUM PHOSPHIDE FOR ELECTRIC-FIELDS UP TO 50 KV/CM [J].

NIELSEN, LD .

PHYSICS LETTERS A, 1972, A 38 (04) :221-&

[9] DETERMINATION OF VELOCITY/FIELD CHARACTERISTIC FOR TYPE INDIUM PHOSPHIDE FROM DIPOLE-DOMAIN MEASUREMENTS [J].

PREW, BA .

ELECTRONICS LETTERS, 1972, 8 (24) :592-+

[10]

REES HD, PRIVATE COMMUNICATIO

← 1 2 →