PREVENTION OF CIRCUMFERENTIAL MELTBACK IN LPE GROWTH OF INP INGAASP INGAAS INP LAYERS FOR AVALANCHE PHOTO-DIODES

被引：8

作者：

KONDO, S

AMANO, T

NAGAI, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90273-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：8 / 14

页数：7

共 9 条

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[4]

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[6] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M [J].

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[7] CRACK FORMATION IN INP-GAXIN1-XAS-INP DOUBLE-HETEROSTRUCTURE FABRICATION [J].

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[8]

NAKAJIMA K, 1982, JAPAN J APPL PHYS LE, V21, P237

[9] NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION [J].

SUSA, N ;

NAKAGOME, H ;

MIKAMI, O ;

ANDO, H ;

KANBE, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (08) :864-870

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