LATERAL COMPOSITION MODULATION IN INGAASP DEPOSITED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON (100)-ORIENTED AND (H11)-ORIENTED INP SUBSTRATES

被引：10

作者：

LAPIERRE, RR ^{[1
]}

ROBINSON, BJ ^{[1
]}

THOMPSON, DA ^{[1
]}

机构：

[1] MCMASTER UNIV, CTR ELECTROPHOTON MAT & DEVICES, HAMILTON, ON L8S 4L7, CANADA

来源：

APPLIED SURFACE SCIENCE | 1995年 / 90卷 / 04期

关键词：

D O I：

10.1016/0169-4332(95)00176-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Lateral composition modulation (LCM) in In1-xGaxAsyP1-y layers deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented (A and B, h=1, 2 and 3) InP substrates are characterized by photoluminescence and X-ray diffraction. Differences in the Group V incorporation for these various surfaces are modelled by incorporation coefficients and discussed in terms of the different surface bonding configurations. These results suggest that the LCM is inhibited by enhanced Group V incorporation on double dangling Group III bonds ((100) and B surfaces) compared to single dangling Group III bonds (A surfaces). The results also suggest that the LCM is inhibited by reduction of Group III adatom migration due to the more reactive step-edge sites of B surfaces compared to A surfaces.

引用

页码：437 / 445

页数：9

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