PLASMA ENHANCED DEPOSITION OF SILICON-NITRIDE FOR USE AS AN ENCAPSULANT FOR SILICON ION-IMPLANTED GALLIUM-ARSENIDE

被引：14

作者：

BARTLE, DC

ANDREWS, DC

GRANGE, JD

HARRIS, PG

TRIGG, AD

WICKENDEN, DK

机构：

来源：

VACUUM | 1984年 / 34卷 / 1-2期

关键词：

D O I：

10.1016/0042-207X(84)90148-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：315 / 320

页数：6

共 17 条

[1]

DRIVER M, 1982, IEEE T ELECTRON DEVI, V28

[2]

DUN H, 1981, J ELECTROCHEM SOC SO, V128

[3] ION-IMPLANTATION IN III-V COMPOUNDS [J].

EISEN, FH .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4) :99-115

[4] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J].

FOXON, CT ;

HARVEY, JA ;

JOYCE, BA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1693-&

[5]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] CAPLESS ANNEALING OF SILICON IMPLANTED GALLIUM-ARSENIDE [J].

GRANGE, JD ;

WICKENDEN, DK .

SOLID-STATE ELECTRONICS, 1983, 26 (04) :313-317

[7] R F PLASMA DEPOSITION OF SILICON-NITRIDE LAYERS [J].

HELIX, MJ ;

VAIDYANATHAN, KV ;

STREETMAN, BG ;

DIETRICH, HB ;

CHATTERJEE, PK .

THIN SOLID FILMS, 1978, 55 (01) :143-148

[8]

LODDING A, 1975, THIN SOLID FILMS, V25, P411

[9]

MIZAZAKI T, 1974, P C ION IMPLANTATION

[10] AIN CAPPED ANNEALING OF SI IMPLANTED SEMI-INSULATING GAAS [J].

OKAMURA, S ;

NISHI, H ;

INADA, T ;

HASHIMOTO, H .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :689-690

← 1 2 →