A THEORETICAL EXPLANATION OF THE CARRIER LIFETIME AS A FUNCTION OF THE INJECTION LEVEL IN GOLD-DOPED SILICON

被引：7

作者：

ABBAS, CC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 10期

关键词：

D O I：

10.1109/T-ED.1984.21728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1428 / 1432

页数：5

共 11 条

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