PASSIVATION PROPERTIES AND INTERFACIAL CHEMISTRY OF PHOTOCHEMICALLY DEPOSITED SIO2 ON HG0.70CD0.30TE

被引：30

作者：

JANOUSEK, BK

CARSCALLEN, RC

BERTRAND, PA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572216

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1723 / 1725

页数：3

共 16 条

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[2] PHOTOCHEMICAL OXIDATION OF (HG,CD)TE [J].

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DAVIS, GD ;

BYER, NE .

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[3]

CATAGNUS PC, 1976, Patent No. 3977018

[4] HIGH-PERFORMANCE BACKSIDE-ILLUMINATED HG0.78CD0.22TE-CDTE(LAMBDA-CO=10-MU-M) PLANAR DIODES [J].

CHU, M ;

VANDERWYCK, AHB ;

CHEUNG, DT .

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[5] HG0.70CD0.30TE ANODIC-OXIDATION [J].

JANOUSEK, BK ;

CARSCALLEN, RC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :442-445

[6] THE MECHANISM OF (HG,CD)TE ANODIC-OXIDATION [J].

JANOUSEK, BK ;

CARSCALLEN, RC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1720-1726

[7]

JANOUSEK BK, 1980, PHYSICS MOS INSULATO, P217

[8]

KIM HM, 1981, 8TH CHEM VAP DEP INT, P258

[9] INTERFACE BETWEEN HG1-XCDXTE AND ITS NATIVE OXIDE [J].

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[10]

PETERS JW, 1982, ELECTROCHEMICAL SOC

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