POINT-DEFECT POPULATIONS IN AMORPHOUS AND CRYSTALLINE SILICON

被引：18

作者：

ROORDA, S

POATE, JM

JACOBSON, DC

EAGLESHAM, DJ

DENNIS, BS

DIERKER, S

SINKE, WC

SPAEPEN, F

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 75卷 / 03期

关键词：

D O I：

10.1016/0038-1098(90)90268-G

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Crystalline Si (c-Si) and relaxed amorphous Si (a-Si) have been ion-bombarded. The kinetics and temperature dependence of the heat released on annealing of these materials are found to be qualitatively similar for temperatures lower than epitaxial crystallization temperatures (550°C). This behavior suggests a close similarity between the mechanisms of structural relaxation in a-Si and defect annihilation in c-Si. The heat release measurements imply that ion bombardment generates a variety of point defects in both a-Si and c-Si. © 1990.

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页码：197 / 200

页数：4

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