CORRELATION OF OPTICAL-CHANGES IN AMORPHOUS-GE WITH ENTHALPY OF RELAXATION

被引:11
作者
DONOVAN, EP [1 ]
HUBLER, GK [1 ]
WADDELL, CN [1 ]
机构
[1] UNIV SO CALIF, DEPT PHYS, LOS ANGELES, CA 90089 USA
关键词
D O I
10.1016/S0168-583X(87)80118-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:590 / 594
页数:5
相关论文
共 9 条
  • [1] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION
    DONOVAN, EP
    SPAEPEN, F
    TURNBULL, D
    POATE, JM
    JACOBSON, DC
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1795 - 1804
  • [2] EFFECTS OF THERMAL ANNEALING ON THE REFRACTIVE-INDEX OF AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION
    FREDRICKSON, JE
    WADDELL, CN
    SPITZER, WG
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 172 - 174
  • [3] Heavens O.S, 1991, OPTICAL PROPERTIES T
  • [4] HUBLER GK, 1985, P SOC PHOTO-OPT INST, V530, P222, DOI 10.1117/12.946490
  • [5] ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF IMPLANTATION DOPED SILICON BY INFRARED REFLECTION
    HUBLER, GK
    MALMBERG, PR
    WADDELL, CN
    SPITZER, WG
    FREDRICKSON, JE
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 60 (1-4): : 35 - 47
  • [6] Potter R. F., 1985, HDB OPTICAL CONSTANT
  • [7] AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION - EFFECTS OF ION MASS AND THERMAL ANNEALING
    WADDELL, CN
    SPITZER, WG
    FREDRICKSON, JE
    HUBLER, GK
    KENNEDY, TA
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4361 - 4366
  • [8] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF ION-IMPLANTED GE
    WANG, KW
    SPITZER, WG
    HUBLER, GK
    DONOVAN, EP
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2739 - 2751
  • [9] The atomic arrangement in glass
    Zachariasen, WH
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1932, 54 : 3841 - 3851