GAAS/GE/GAAS HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY

被引:58
作者
STRITE, S
UNLU, MS
ADOMI, K
GAO, GB
AGARWAL, A
ROCKETT, A
MORKOC, H
LI, D
NAKAMURA, Y
OTSUKA, N
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] PURDUE UNIV,W LAFAYETTE,IN 47907
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 05期
关键词
D O I
10.1116/1.584931
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1131 / 1140
页数:10
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