MOVPE GROWTH OF STRAINED INASP/INGAASP QUANTUM-WELL STRUCTURES FOR LOW-THRESHOLD 1.3-MU-M LASERS

被引:56
作者
YAMAMOTO, M
YAMAMOTO, N
NAKANO, J
机构
[1] NTT Opto-Electronics Laboratories, Atsugi-shi, Kanagawa 24301, 3–1, Morinosato Wakamiya
关键词
D O I
10.1109/3.283802
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Device-quality strained InAsP/InGaAsP multiple-quantum-well (MQW) structures are successfully grown using low-pressure metalorganic vapor phase epitaxy method. The grown MQW structures are characterized using X-ray, photoluminescence, and photocurrent measurements that confirm that their structural and optical qualities are high enough for practical device applications, as well as that the InAsP/InGaAsP heterostructures have a large conduction-band offset. The grown wafers are processed into 40-mum-wide stripe-ridge waveguide lasers. Threshold current densities as low as 88 A/cm2 are achieved for a graded-index separate-confinement-heterostructure (GRIN-SCH) single-quantum-well laser diode. Buried heterostructure laser diodes fabricated from GRIN-SCH 4-well strained MQW wafers have threshold current as low as 1.05 mA at 26-degrees-C and 7.2 mA at 106-degrees-C.
引用
收藏
页码:554 / 561
页数:8
相关论文
共 23 条
[11]   BAND-EDGE DISCONTINUITIES OF STRAINED-LAYER INXGA1-XAS/GAAS HETEROJUNCTIONS AND QUANTUM WELLS [J].
NIKI, S ;
LIN, CL ;
CHANG, WSC ;
WIEDER, HH .
APPLIED PHYSICS LETTERS, 1989, 55 (13) :1339-1341
[12]   PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF INAS0.67P0.33/INP STRAINED SINGLE QUANTUM-WELLS [J].
SCHNEIDER, RP ;
WESSELS, BW .
JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (12) :1117-1123
[13]   X-RAY DIFFRACTION FROM ONE-DIMENSIONAL SUPERLATTICES IN GAAS1-XPX CRYSTALS [J].
SEGMULLER, A ;
BLAKESLEE, AE .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (FEB1) :19-25
[14]   ZERO-NET-STRAIN MULTIQUANTUM WELL LASERS [J].
SELTZER, CP ;
PERRIN, SD ;
TATHAM, MC ;
COOPER, DM .
ELECTRONICS LETTERS, 1991, 27 (14) :1268-1269
[15]   CRITICAL LAYER THICKNESS IN STRAINED GA1-XINXAS/INP QUANTUM WELLS [J].
TEMKIN, H ;
GERSHONI, DG ;
CHU, SNG ;
VANDENBERG, JM ;
HAMM, RA ;
PANISH, MB .
APPLIED PHYSICS LETTERS, 1989, 55 (16) :1668-1670
[16]  
THIJS PJA, 1991, 1991 P EUR C OPT COM
[17]   HIGH-RESOLUTION X-RAY-DIFFRACTION STUDIES OF INGAAS(P)/INP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].
VANDENBERG, JM ;
HAMM, RA ;
PANISH, MB ;
TEMKIN, H .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1278-1283
[18]  
YABLONOVITCH E, 1988, J LIGHTWAVE TECHNOL, V6, P1292
[19]  
YAMAMOTO M, 1993, FIFTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, P231
[20]   STRAINED-LAYER INGAAS/INGAASP MQW STRUCTURES AND THEIR APPLICATION TO 1.67 MU-M LASERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
YAMAMOTO, M ;
OISHI, M ;
SUDO, H ;
NAKANO, J ;
TSUZUKI, N .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :796-801