THERMIONIC EMISSION FROM NEGATIVE ELECTRON AFFINITY SILICON

被引：10

作者：

HOWORTH, JR ^{[1
]}

SHEPPARD, CJ ^{[1
]}

HOLTOM, R ^{[1
]}

HARMER, AL ^{[1
]}

机构：

[1] ENGLISH ELECT VALVE CO LTD,CHELMSFORD CM1 2QU,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 01期

关键词：

D O I：

10.1063/1.321356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：151 / 157

页数：7

共 25 条

[11]

HEIMANN W, 1969, ADV ELECTRON PHYS B, V28, P677

[12]

HOLTOM R, UNPUBLISHED

[13] CS-O NEGATIVE ELECTRON-AFFINITY SURFACES ON SILICON [J].

HOWORTH, JR ;

HOLTOM, R ;

TRAWNY, EW ;

HARMER, AL .

APPLIED PHYSICS LETTERS, 1972, 21 (07) :316-&

[14] ELECTRIC-FIELD ENHANCEMENT OF ESCAPE PROBABILITY ON NEGATIVE ELECTRON-AFFINITY SURFACES [J].

HOWORTH, JR ;

HARMER, AL ;

TRAWNY, EWL ;

HOLTOM, R ;

SHEPPARD, CJ .

APPLIED PHYSICS LETTERS, 1973, 23 (03) :123-124

[15]

HOWORTH JR, UNPUBLISHED

[16] PHOTOEMISSION FROM CESIUM OXIDE COVERED GAINAS [J].

KLEIN, W .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4384-&

[17] STRUCTURAL AND ELECTRONIC MODEL OF NEGATIVE ELECTRON AFFINITY ON SI-CS-O SURFACE [J].

LEVINE, JD .

SURFACE SCIENCE, 1973, 34 (01) :90-107

[18] THERMIONIC EMISSION FROM SI/CS/O(100) SURFACE [J].

MARTINEL.RU .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1183-1190

[19] REFLECTION AND TRANSMISSION SECONDARY EMISSION FROM SILICON [J].

MARTINEL.RU .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :313-&

[20] NEGATIVE ELECTRON AFFINITY SURFACES ON SILICON USING A RUBIDIUM-OXYGEN DIPOLE LAYER [J].

MARTINELLI, RU .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2566-2570

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