INVESTIGATION OF CRYSTALLINE AND OPTICAL-PROPERTIES OF AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EXPITAXY

被引:62
作者
PRASEUTH, JP [1 ]
GOLDSTEIN, L [1 ]
HENOC, P [1 ]
PRIMOT, J [1 ]
DANAN, G [1 ]
机构
[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92220 BAGNEUX,FRANCE
关键词
D O I
10.1063/1.338859
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:215 / 219
页数:5
相关论文
共 17 条
[1]   SILICON DOPING AND IMPURITY PROFILES IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHENG, KY ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4411-4415
[2]   MOLECULAR-BEAM EPITAXY OF GASB0.5AS0.5 AND ALXGA1-XSBYAS1-Y LATTICE MATCHED TO INP [J].
CHIU, TH ;
TSANG, WT ;
CHU, SNG ;
SHAH, J ;
DITZENBERGER, JA .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :408-410
[3]   THE GROWTH AND CHARACTERIZATION OF NOMINALLY UNDOPED AL1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
DAVIES, GJ ;
KERR, T ;
TUPPEN, CG ;
WAKEFIELD, B ;
ANDREWS, DA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :219-223
[4]   HEAVILY SI-DOPED INGAAS LATTICE-MATCHED TO INP GROWN BY MBE [J].
FUJII, T ;
INATA, T ;
ISHII, K ;
HIYAMIZU, S .
ELECTRONICS LETTERS, 1986, 22 (04) :191-192
[5]   MOLECULAR-BEAM EPITAXIAL-GROWTH AND OPTICAL-PROPERTIES OF GA0.47IN0.53AS AL0.48IN0.52AS ON INP AND GA1-XINXAS/GAAS ON GAAS QUANTUM WELLS [J].
GOLDSTEIN, L ;
CHARASSE, MN ;
JEANLOUIS, AM ;
LEROUX, G ;
ALLOVON, M ;
MARZIN, JY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :947-949
[6]  
GOSSARD AC, 1982, 2ND P INT C MBE TOK, P39
[7]   HEAVY DOPING OF GAAS AND ALGAAS WITH SILICON BY MOLECULAR-BEAM EPITAXY [J].
HEIBLUM, M ;
WANG, WI ;
OSTERLING, LE ;
DELINE, V .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6751-6753
[8]   COMPOSITION MODULATION IN LIQUID-PHASE EPITAXIAL INXGA1-XASYP1-Y LAYERS LATTICE MATCHED TO INP SUBSTRATES [J].
HENOC, P ;
IZRAEL, A ;
QUILLEC, M ;
LAUNOIS, H .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :963-965
[9]  
HENOC P, UNPUB
[10]   IMPROVEMENTS OF ELECTRICAL AND OPTICAL-PROPERTIES OF INALAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KAWAMURA, Y ;
NAKASHIMA, K ;
ASAHI, H .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :3262-3264