CHEMICAL-EQUILIBRIUM MODEL OF OPTIMAL A-SI-H GROWTH FROM SIH4

被引：31

作者：

WINER, K

机构：

[1] Xerox Palo Alto Research Center, Palo Alto

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.41.7952

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A model of optimal hydrogenated-amorphous-silicon growth based on bulk chemical reactions involving Si-Si and Si-H bonds is proposed. The optimal growth temperature is determined by the balance between the rate of hydrogen diffusion and the rate of film growth. © 1990 The American Physical Society.

引用

页码：7952 / 7954

页数：3

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