DEPOSITION OF LASER ENERGY INTO INHOMOGENEOUS LAYER SYSTEMS

被引：10

作者：

GEILER, HD

HEHL, K

STOCK, D

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 01期

关键词：

D O I：

10.1002/pssa.2210780123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：193 / 199

页数：7

共 11 条

[1] DYNAMICS OF Q-SWITCHED LASER ANNEALING [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SIMONS, AL ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :777-779

[2]

Baeri P., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P151

[3]

BASS FG, 1975, GORYACHIE ELEKTRONI

[4] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE [J].

BELL, RO ;

TOULEMONDE, M ;

SIFFERT, P .

APPLIED PHYSICS, 1979, 19 (03) :313-319

[5] MODELING OF CW LASER ANNEALING OF MULTILAYER STRUCTURES [J].

CALDER, ID ;

SUE, R .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7545-7550

[6] LASER-LIGHT ABSORPTION IN MULTILAYERS [J].

COLINGE, JP ;

VANDEWIELE, F .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4769-4771

[7] A MODEL OF ENERGY DEPOSITION INTO SEMICONDUCTORS DURING LASER ANNEALING [J].

GEILER, HD ;

HEHL, K ;

STOCK, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (01) :K57-K62

[8]

Heavens O.S, 1991, OPTICAL PROPERTIES T

[9] COMPUTER MODELING OF THE TEMPERATURE RISE AND CARRIER CONCENTRATION INDUCED IN SILICON BY NANOSECOND LASER-PULSES [J].

LIETOILA, A ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3207-3213

[10] OPTICAL HEATING IN SEMICONDUCTORS [J].

MEYER, JR ;

BARTOLI, FJ ;

KRUER, MR .

PHYSICAL REVIEW B, 1980, 21 (04) :1559-1568

← 1 2 →