INCORPORATION OF DEEP CENTERS IN VPE GAAS

[1] ASHEN DJ, 1974, 5TH P INT S GAAS

[2] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 375 - 380

[3] OPTICAL-ABSORPTION ON LOCALIZED LEVELS IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4171 - 4177

[4] PHOTOCAPACITANCE STUDIES IN HIGH-PURITY GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 22 (02): : 671 - 675

[5] BOIS D, TO BE PUBLISHED

[6] BOIS D, 1972, THESIS LYON

[7] BOIS D, 1974, J PHYSIQUE, V35

[8] CAIRNS B, 1970, J ELECTROCHEM SOC, V117, P1970

[9] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +

[10] FUHLER CS, 1967, J APPL PHYS, V38, P2873

[1] ASHEN DJ, 1974, 5TH P INT S GAAS

[2] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 375 - 380

[3] OPTICAL-ABSORPTION ON LOCALIZED LEVELS IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4171 - 4177

[4] PHOTOCAPACITANCE STUDIES IN HIGH-PURITY GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 22 (02): : 671 - 675

[5] BOIS D, TO BE PUBLISHED

[6] BOIS D, 1972, THESIS LYON

[7] BOIS D, 1974, J PHYSIQUE, V35

[8] CAIRNS B, 1970, J ELECTROCHEM SOC, V117, P1970

[9] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +

[10] FUHLER CS, 1967, J APPL PHYS, V38, P2873