OPTIMIZATION OF MOVPE GROWN INXAL1-XAS/IN0.53GA0.47AS PLANAR HETEROEPITAXIAL SCHOTTKY DIODES FOR TERAHERTZ APPLICATIONS

被引：3

作者：

HONG, KS

MARSH, PF

NG, GI

PAVLIDIS, D

HONG, CH

机构：

[1] Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor

[2] Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, TRW Electronics and Technology Division, Redondo Beach

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 09期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/16.310098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The feasibility of InP-based planar heteroepitaxial diodes for terahertz multiplier and mixer applications is explored. A variety of InxAl1-x As/In0.53Ga0.47As (x = 0.52, 0.4) diodes have been grown using LP-MOVPE and allows systematic characterization of the effects of barrier thickness, InAs mole fraction and active layer thickness on the diode DC and RF performance. A new fabrication technology is developed for planar diodes using dielectric-free air-bridged anode fingers and trench isolation to minimize series resistance and parasitic capacitance. A qualitative model is suggested to explain the forward current conduction mechanism of the reported diodes. The control of forward current conduction and reverse leakage by epitaxial design together with the demonstrated figure-of-merit cutoff frequency of 2.6 THz make the diodes suitable for multiplier and mixer terahertz applications.

引用

页码：1489 / 1497

页数：9

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