DEEP-LEVEL IMPURITY ANALYSIS FOR P-N-JUNCTIONS OF A BIPOLAR-TRANSISTOR FROM LOW-FREQUENCY G-R NOISE MEASUREMENTS

被引：30

作者：

DAI, YS

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 06期

关键词：

D O I：

10.1016/0038-1101(89)90025-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：439 / 443

页数：5

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[9] DEEP-LEVEL ANALYSIS IN (ALGA)AS-GAAS 2-D ELECTRON-GAS DEVICES BY MEANS OF LOW-FREQUENCY NOISE MEASUREMENTS [J].

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