ON THE TEMPERATURE-DEPENDENCE OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON

被引：4

作者：

DONOLATO, C

机构：

[1] CNR, Bologna, Italy, CNR, Bologna, Italy

来源：

JOURNAL DE PHYSIQUE | 1986年 / 47卷 / 02期

关键词：

CRYSTALS - Dislocations - ELECTRON BEAMS - Applications - SILICON AND ALLOYS;

D O I：

10.1051/jphys:01986004702017100

中图分类号：

学科分类号：

摘要：

In some recent papers the measurements of the temperature dependence of the electron beam induced current contrast of dislocations in silicon have been interpreted as being in disagreement with the predictions of the linear contrast model proposed by Donolato. Here it is shown that this conclusion was based on an improper assumption regarding the functional form of the recombination strength of a dislocation; omitting this assumption removes the discrepancy.

引用

页码：171 / 173

页数：3

共 8 条

[1] QUANTITATIVE-EVALUATION OF THE EBIC CONTRAST OF DISLOCATIONS [J].