共 9 条
[1]
SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1982, 20 (02)
:137-142
[2]
GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1984, 2 (02)
:436-440
[4]
BEAN JC, IN PRESS J VAC SCI B
[5]
BEVEK J, 1986, APPL PHYS LETT, V49, P286
[6]
A PERFORMANCE COMPARISON OF VACUUM DEPOSITION MONITORS EMPLOYING ATOMIC-ABSORPTION (AA) AND ELECTRON-IMPACT EMISSION-SPECTROSCOPY (EIES)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1983, 1 (02)
:252-256
[7]
GOGOL CA, 1985, 1ST P INT S SI MOL B, V85, P415
[8]
LU C, 1975, 18TH P ANN C SOC VAC, P1
[9]
ELIMINATION OF FLUX TRANSIENTS IN MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (02)
:564-567