ATOMICALLY RESOLVED IMAGE OF CLEAVED SURFACES OF COMPOUND SEMICONDUCTORS OBSERVED WITH AN ULTRAHIGH-VACUUM ATOMIC-FORCE MICROSCOPE

被引：14

作者：

OHTA, M

SUGAWARA, Y

OSAKA, F

OHKOUCHI, S

SUZUKI, M

MISHIMA, S

OKADA, T

MORITA, S

机构：

[1] OPTOELECTR TECHNOL RES LAB, TSUKUBA, IBARAKI 30026, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, ATSUGI, KANAGAWA 24301, JAPAN

[3] OLYMPUS OPT CO LTD, RES DEPT, HACHIOJI, TOKYO 192, JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.587835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An atomically resolved image of a cleaved InP(110) surface with an ultrahigh vacuum atomic force microscope (UHV AFM) was obtained under the contact mode for the first time. The rectangular lattice could be clearly observed. The distances and corrugation amplitudes between the protrusions along the [001] and [11̄0] directions are estimated to be 5.8 ± 0.6 and 4.1 ± 0.4 angstrom, and 1.3 ± 0.2 and 0.7 ± 0.2 angstrom, respectively. These results suggest that the UHV AFM has potential for investigating III-V compound semiconductor surfaces on an atomic scale.

引用

页码：1265 / 1267

页数：3

共 20 条

[1] THEORETICAL INTERPRETATION OF ATOMIC-FORCE-MICROSCOPE IMAGES OF GRAPHITE [J].