INTEGRATED ALGAAS 2-BEAM LD-PD ARRAY FABRICATED BY REACTIVE ION-BEAM ETCHING

被引：7

作者：

UCHIDA, M

MATSUMOTO, S

ASAKAWA, K

KAWANO, H

机构：

[1] NEC, Kawasaki, Jpn, NEC, Kawasaki, Jpn

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 11期

关键词：

LASERS; SEMICONDUCTOR;

D O I：

10.1049/el:19860398

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolitically integrated AlGaAs two-beam laser diode (LD)-photodiode (PD) arrays are described. LDs and PDs have etched facets fabricated by reactive ion beam etching (RIBE). LDs in the array exhibit threshold currents as low as 18 ma and external quantum efficiencies of more than 30% per facet. A PD can detect more than 20% of a light beam emitted from an LD facing it. Crosstalk between the two LD-PD columns (separated by 50 mu m) is suppressed to less than -20 db by an AlGaAs optical barrier (5 mu m thick) fabricated between them.

引用

页码：585 / 587

页数：3

共 11 条

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