IDENTIFICATION OF DEFECTS IN AMORPHOUS-SILICON

被引：44

作者：

REDFIELD, D

BUBE, RH

机构：

[1] Department of Materials Science and Engineering, Stanford University, Stanford

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.65.464

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Defects in amorphous Si:H are identified by a new atomic model encompassing built-in defects and light-induced defects. The model consists of a metastable localized center having an atom with two possible sites, as in the Chadi and Chang model for DX centers in crystalline GaAs. Specific rehybridizations for two-site atoms produce changes in charge state and bonding that explain a wide range of effects, including n-type or p-type doping or compensation, the Staebler-Wronski effect and its variations with doping, quench-induced defects, and defect spin. © 1990 The American Physical Society.

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页码：464 / 467

页数：4

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