NUMERICAL-SOLUTION OF THE NONLINEAR DIFFUSION EQUATION FOR THE ANOMALOUS BORON-DIFFUSION IN SILICON

被引：1

作者：

AN, DK ^{[1
]}

机构：

[1] ACAD SCI VIETNAM, INST PHYS, DEPT PHYS & TECHNOL SEMICONDUCTOR DEVICES, HANOI, VIETNAM

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1985年 / 90卷 / 01期

关键词：

D O I：

10.1002/pssa.2210900116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：173 / 180

页数：8

共 11 条

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[4]

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[9] DIFFUSION OF BORON FROM IMPLANTED SOURCES UNDER OXIDIZING CONDITIONS [J].

PRINCE, JL ;

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[10] ANOMALOUS DIFFUSION IN SEMICONDUCTORS - A QUANTITATIVE ANALYSIS [J].

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