ACOUSTIC AND OPTICAL-PHONON-LIMITED MOBILITIES IN P-TYPE SILICON WITHIN THE DEFORMATION-POTENTIAL THEORY

被引:13
作者
SZMULOWICZ, F
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10.1063/1.94360
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O59 [应用物理学];
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页码:485 / 487
页数:3
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共 29 条
[21]   FULL-BOLTZMANN-EQUATION SOLUTIONS OF THE ACOUSTIC-PHONON-LIMITED CONDUCTIVITY AND HALL MOBILITIES FOR P-TYPE SILICON AND GERMANIUM [J].
SZMULOWICZ, F ;
MADARASZ, FL .
PHYSICAL REVIEW B, 1983, 27 (10) :6279-6295
[22]   ANGULAR-DEPENDENCE OF HOLE ACOUSTIC-PHONON TRANSITION RATES IN SILICON [J].
SZMULOWICZ, F ;
MADARASZ, FL .
PHYSICAL REVIEW B, 1982, 26 (04) :2101-2112
[23]   DEFORMATION-POTENTIAL-THEORY CALCULATION OF THE ACOUSTIC-PHONON-LIMITED CONDUCTIVITY AND HALL MOBILITIES FOR P-TYPE SILICON [J].
SZMULOWICZ, F ;
MADARASZ, FL .
PHYSICAL REVIEW B, 1983, 27 (04) :2605-2608
[24]  
SZMULOWICZ F, UNPUB PHYS REV B
[25]   TEMPERATURE-DEPENDENCE OF MOBILITY AND HALL-COEFFICIENT FACTOR FOR HOLES OF HIGHLY PURE SILICON [J].
TAKEDA, K ;
SAKUI, K ;
SAKATA, M .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (04) :767-776
[27]   ACOUSTIC-MODE SCATTERING OF HOLES [J].
TIERSTEN, M .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1961, 5 (02) :122-131
[28]   A METHOD FOR OBTAINING ELECTRONIC EIGENFUNCTIONS AND EIGENVALUES IN SOLIDS WITH AN APPLICATION TO SODIUM [J].
VONDERLAGE, FC ;
BETHE, HA .
PHYSICAL REVIEW, 1947, 71 (09) :612-622
[29]  
Wiley J.D., 1975, SEMICONDUCTORS SEMIM, V10