THEORY OF AMORPHOUS-SILICON CHARGE-COUPLED-DEVICES

被引：5

作者：

NARUKE, Y

KISHIDA, S

UCHIDA, Y

MATSUMURA, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 03期

关键词：

D O I：

10.1109/T-ED.1984.21528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：362 / 366

页数：5

共 10 条

[1] AMORPHOUS-SILICON SILICON-OXYNITRIDE FIELD-EFFECT TRANSISTORS [J].

ISHIBASHI, K ;

MATSUMURA, M .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :454-456

[2] AMORPHOUS-SILICON CHARGE-COUPLED-DEVICES [J].

KISHIDA, S ;

NARA, Y ;

KOBAYASHI, O ;

MATSUMURA, M .

APPLIED PHYSICS LETTERS, 1982, 41 (12) :1154-1156

[3] THEORETICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORS [J].

KISHIDA, S ;

NARUKE, Y ;

UCHIDA, Y ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (03) :511-517

[4] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].

LECOMBER, PG ;

SPEAR, WE ;

GHAITH, A .

ELECTRONICS LETTERS, 1979, 15 (06) :179-181

[5]

LECOMBER PG, 1979, AMORPHOUS SEMICONDUC, P265

[6] AMORPHOUS-SILICON IMAGE SENSOR IC [J].

MATSUMURA, M ;

HAYAMA, H ;

NARA, Y ;

ISHIBASHI, K .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :182-184

[7] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN ADDRESSABLE LIQUID-CRYSTAL DISPLAY PANELS [J].

SNELL, AJ ;

MACKENZIE, KD ;

SPEAR, WE ;

LECOMBER, PG ;

HUGHES, AJ .

APPLIED PHYSICS, 1981, 24 (04) :357-362

[8]

SUGIURA O, 1982, T I ELECTRON COMMU C, V65, P914

[9] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE [J].

TIEDJE, T ;

CEBULKA, JM ;

MOREL, DL ;

ABELES, B .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1425-1428

[10] QUANTITATIVE EFFECTS OF INTERFACE STATES ON PERFORMANCE OF CHARGE-COUPLED DEVICES [J].

TOMPSETT, MF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (01) :45-55

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