CORRELATION BETWEEN LINEWIDTH REBROADENING AND LOW-FREQUENCY RIN ENHANCEMENT IN SEMICONDUCTOR-LASERS

被引：4

作者：

GRAY, GR

AGRAWAL, GP

机构：

[1] The Institute of Optics, University of Rochester, Rochester

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 13期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19910717

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The observed correlation between the linewidth rebroadening and the low-frequency RIN enhancement at high operating power in nearly-singlemode semiconductor lasers is explained by using the two-mode rate equations which include both the self- and cross-saturation contributions to the nonlinear gain.

引用

页码：1150 / 1152

页数：3

共 7 条

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ELECTRONICS LETTERS, 1990, 26 (24) :2002-2003

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