SURFACE RELATED CORE LEVEL SHIFTS FOR THE SI(111)SQUARE-ROOT-3X SQUARE-ROOT-3 - AL SYSTEM

被引：6

作者：

ANDERSEN, JN

WIGREN, C

KARLSSON, UO

机构：

[1] MAX-LAB, Lund University, Box 118, Lund

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.585707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Si(111) square-root 3 x square-root 3:Al reconstruction has been studied by surface sensitive high resolution core level spectroscopy. It is shown that three components are needed to fit the Si 2p spectra. The Al2p emission is found to consist of more than one component and it is argued that this is related to defects in the overlayer.

引用

页码：2384 / 2387

页数：4

共 21 条

[1] SI(111)7X7 AND SI(111)SQUARE-ROOT-3XSQUARE-ROOT-3-AL SURFACE-STRUCTURE ANALYSIS BY ION-INDUCED AUGER-ELECTRON SPECTROSCOPY
AIZAWA, T
TSUNO, T
DAIMON, H
INO, S
[J]. PHYSICAL REVIEW B, 1987, 36 (17): : 9107 - 9114
[2] ANDERSEN JN, 1989, MAXLAB ACTIVITY REPO
[3] REDUCTION OF SILICON-ALUMINUM INTERDIFFUSION BY IMPROVED SEMICONDUCTOR SURFACE ORDERING
BRILLSON, LJ
SLADE, ML
KATNANI, AD
KELLY, M
MARGARITONDO, G
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 110 - 112
[4] PHOTOEMISSION-STUDIES OF ATOMIC REDISTRIBUTION AT GOLD-SILICON AND ALUMINUM-SILICON INTERFACES
BRILLSON, LJ
KATNANI, AD
KELLY, M
MARGARITONDO, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 551 - 555
[5] CORE-LEVEL BINDING-ENERGY SHIFTS, THERMODYNAMIC PREDICTIONS, AND MORPHOLOGIES FOR METAL-SI AND METAL-GE INTERFACES
DELGIUDICE, M
JOYCE, JJ
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1987, 36 (09): : 4761 - 4768
[6] ELECTRONIC-STRUCTURE OF LOCALIZED SI DANGLING-BOND DEFECTS BY TUNNELING SPECTROSCOPY
HAMERS, RJ
DEMUTH, JE
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (24) : 2527 - 2530
[7] EFFECTS OF COVERAGE ON THE GEOMETRY AND ELECTRONIC-STRUCTURE OF AL OVERLAYERS ON SI(111)
HAMERS, RJ
[J]. PHYSICAL REVIEW B, 1989, 40 (03): : 1657 - 1671
[8] SURFACE CORE-LEVEL SHIFTS OF THE SI(111) SQUARE-ROOT-3SQUARE-ROOT-3-GA SURFACE
HIGASHIYAMA, K
KONO, S
KINOSHITA, T
MIYAHARA, T
KATO, H
OHSAWA, H
ENTA, Y
MAEDA, F
YAEGASHI, Y
[J]. SURFACE SCIENCE, 1987, 186 (03) : L568 - L574
[9] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
HIMPSEL, FJ
HEIMANN, P
CHIANG, TC
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[10] HIMPSEL FJ, 1990, P INT SCH PHYSICS E

← 1 2 3 →