ON THE STABILITY OF THIN EPITAXIAL NISI2 LAYERS ON SI (111)

被引：12

作者：

VONKANEL, H

GRAF, T

HENZ, J

OSPELT, M

WACHTER, P

机构：

[1] ETH Zurich, Zurich, Switz, ETH Zurich, Zurich, Switz

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1986年 / 2卷 / 04期

关键词：

Financial support by the Swiss National Science Foundation (NFP 19) is also gratefully acknowledged;

D O I：

10.1016/0749-6036(86)90048-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：363 / 368

页数：6

共 9 条

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[3]

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[5] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111) [J].

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HO, PS .

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[7] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J].

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[8] SCHOTTKY-BARRIER FORMATION AT SINGLE-CRYSTAL METAL-SEMICONDUCTOR INTERFACES [J].

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PHYSICAL REVIEW LETTERS, 1984, 52 (06) :461-464

[9]

VONKANEL H, UNPUB J CRYSTAL GROW

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