TERAHERTZ SPECTROSCOPY OF OPTICALLY THICK MULTILAYERED SEMICONDUCTOR STRUCTURES

被引：39

作者：

RALPH, SE ^{[1
]}

PERKOWITZ, S ^{[1
]}

KATZENELLENBOGEN, N ^{[1
]}

GRISCHKOWSKY, D ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1994年 / 11卷 / 12期

关键词：

D O I：

10.1364/JOSAB.11.002528

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Using freely propagating terahertz radiation, we have measured the complex dielectric constant of optically thick layered materials from 0.2 THz (6.6 cm(-1)) to 6 THz (200 cm(-1)). Transmission measurements of a CdTe-adhesive-Si structure have been successfully fitted to a theoretical model over the measurement range. The accuracy of the theoretical fit shows that the technique of time-domain spectroscopy offers advantages over other spectroscopic methods in the extreme far infrared below 200 cm(-1) The signal-to-noise capability of our terahertz-spectroscopy technique permits accurate measurement of power transmission coefficients less than 0.001 (absorption coefficients >5000 cm(-1)) and index variations larger than lambda(dn/d lambda) > 44, as demonstrated by the accurate fit of our data through the Reststrahlen region of CdTe.

引用

页码：2528 / 2532

页数：5

共 12 条

[1]

Born M., 2019, PRINCIPLES OPTICS

[2] FAR-INFRARED TIME-DOMAIN SPECTROSCOPY WITH TERAHERTZ BEAMS OF DIELECTRICS AND SEMICONDUCTORS [J].

GRISCHKOWSKY, D ;

KEIDING, S ;

VANEXTER, M ;

FATTINGER, C .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (10) :2006-2015

[3]

Grischkowsky D., 1992, Optics & Photonics News, V3, P21, DOI 10.1364/OPN.3.5.000021

[4] ELECTRICAL CHARACTERIZATION TO 4 THZ OF N-TYPE AND P-TYPE GAAS USING THZ TIME-DOMAIN SPECTROSCOPY [J].

KATZENELLENBOGEN, N ;

GRISCHKOWSKY, D .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :840-842

[5]

PALIK ED, 1985, OPTICAL PROPERTIES S

[6] FAR INFRARED CHARACTERIZATION OF HG1-XCDXTE AND RELATED ELECTRONIC MATERIALS [J].

PERKOWITZ, S .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (05) :551-562

[7] INFRARED PROPERTIES OF SEMICONDUCTORS - TALKING PHYSICS WITH SIMPLE-MODELS, A LA BURSTEIN,ELI [J].

PERKOWITZ, S .

SOLID STATE COMMUNICATIONS, 1992, 84 (1-2) :19-23

[8]

PERKOWITZ S, 1993, OPTICAL CHARACTERIZA, P157

[9]

RALPH SE, 1992, MATER RES SOC SYMP P, V261, P89, DOI 10.1557/PROC-261-89

[10] TRAP-ENHANCED ELECTRIC-FIELDS IN SEMI-INSULATORS - THE ROLE OF ELECTRICAL AND OPTICAL CARRIER INJECTION [J].

RALPH, SE ;

GRISCHKOWSKY, D .

APPLIED PHYSICS LETTERS, 1991, 59 (16) :1972-1974

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