ENERGY-LEVELS AND PROPERTIES OF DEFECTS ON RECONSTRUCTED DISLOCATIONS IN SILICON

被引：8

作者：

HEGGIE, MI

JONES, R

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-4期

关键词：

D O I：

10.1051/jphyscol:1983405

中图分类号：

学科分类号：

摘要：

引用

页码：43 / 47

页数：5

共 32 条

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[9]

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[10]

HEGGIE MI, 1982, THESIS U EXETER

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