STATE-OF-THE-ART 1.3-MU-M LASERS BY ATMOSPHERIC-PRESSURE MOVPE USING TERTIARY BUTYLPHOSPHINE

被引：13

作者：

OUGAZZADEN, A

MELLET, R

GAO, Y

KAZMIERSKI, C

ROBEIN, D

MIRCEA, A

机构：

[1] Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, Bagneux, 196 avenue Henri-Ravera

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 11期

关键词：

SEMICONDUCTOR LASERS; LASERS; EPITAXY AND EPITAXIAL GROWTH;

D O I：

10.1049/el:19910626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excellent 1.3 micrometre laser devices were realised for the first time with active light-emitting layers grown from the alternative phosphorous precursor TBP instead of phosphine. A wider temperature range than previously reported was explored for growth under TBP. The replacement of phosphine appears entirely feasible, albeit expensive.

引用

页码：1005 / 1006

页数：2

共 6 条

[1] EXTREMELY LOW THRESHOLD OPERATION OF 1.5-MU-M GAINASP-INP BURIED RIDGE STRIPE LASERS [J].