LOW-RESISTIVITY OHMIC CONTACTS ON P-TYPE CDTE BY PULSED LASER-HEATING

被引：13

作者：

TEWS, H ^{[1
]}

AN, C ^{[1
]}

机构：

[1] CTR NATL RECH SCI,PHYS SOLIDES LAB,F-92190 MEUDON,FRANCE

来源：

关键词：

D O I：

10.1063/1.329883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5339 / 5341

页数：3

共 10 条

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[3] EXPERIMENTS ON THE FORMATION OF LOW RESISTANCE IN-CONTACTS ON AL-DOPED ZNSE
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[4] TRANSITION RESISTANCES OF OHMIC CONTACTS TO P-TYPE CDTE AND THEIR TIME-DEPENDENT VARIATION
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[5] KITAHARA GT, 1975, J APPL PHYS, V46, P1184
[6] MEASUREMENT OF BARRIER HEIGHT ON ETCHED PARA-TYPE CADMIUM TELLURIDE
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 59 (01): : 259 - 262
[7] Schneider M., UNPUB
[8] LASER-INDUCED DIFFUSION OF OXYGEN IN ZNTE
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AN, C
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 41 - 43
[9] UNDOPED HIGH-RESISTIVITY CADMIUM TELLURIDE FOR NUCLEAR RADIATION DETECTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2759 - 2765
[10] ZANIO K, 1978, SEMICONDUCTORS SEMIM, V13, P144