LATERAL DISTRIBUTION OF RADIATION-INDUCED DAMAGE IN MOSFETS

被引：13

作者：

CHEN, WL ^{[1
]}

BALASINSKI, A ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/23.124084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Significant lateral nonuniformity of radiation-induced oxide charge and interface traps in short channel CMOS transistors has been determined. This nonuniformity affects device DC parameters. A newly developed technique was used in this study. Its basic principles will be briefly discussed. Results on MOSFET's irradiated under various bias conditions will be presented.

引用

页码：1124 / 1129

页数：6

共 6 条

[1] LATERAL DISTRIBUTION OF HOT-CARRIER-INDUCED INTERFACE TRAPS IN MOSFETS [J].