PHOTOEMISSION-STUDY OF THE DEVELOPMENT OF THE TI/GAAS(110) INTERFACE

被引：32

作者：

RUCKMAN, MW

DELGIUDICE, M

JOYCE, JJ

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.33.2191

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2191 / 2197

页数：7

共 39 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[2] BRILLSON LJ, 1983, PHYS REV B, V28, P7051
[3] BUTERA RA, UNPUB
[4] ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS
Calandra, C.
Bisi, O.
Ottaviani, G.
[J]. SURFACE SCIENCE REPORTS, 1985, 4 (5-6) : 271 - 364
[5] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
CHYE, PW
LINDAU, I
PIANETTA, P
GARNER, CM
SU, CY
SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
[6] CHEMICAL-REACTION AND SCHOTTKY-BARRIER FORMATION AT V/SI INTERFACES
CLABES, JG
RUBLOFF, GW
TAN, TY
[J]. PHYSICAL REVIEW B, 1984, 29 (04): : 1540 - 1550
[7] INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION
DANIELS, RR
KATNANI, AD
ZHAO, TX
MARGARITONDO, G
ZUNGER, A
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (12) : 895 - 898
[8] CLUSTER FORMATION AND ATOMIC INTERMIXING AT THE REACTIVE V/GE(111) INTERFACE
DELGIUDICE, M
JOYCE, JJ
RUCKMAN, MW
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1985, 32 (08): : 5149 - 5155
[9] DELGIUDICE M, UNPUB SURF SCI
[10] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656