CHEMICAL ETCHING OF GERMANIUM IN SOLUTIONS OF HF, HNO3, H2O, AND HC2H3O2

被引:28
作者
SCHWARTZ, B
ROBBINS, H
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D O I
10.1149/1.2426082
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:196 / 201
页数:6
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共 16 条
[1]   ETCHING GE WITH MIXTURES OF HF-H2O2-H2O [J].
BLOEM, J ;
VANVESSEM, JC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) :33-36
[2]  
BURGESS T, COMMUNICATION
[3]   CHEMICAL ETCHING OF GERMANIUM IN HF-HNO3-H2O SOLUTIONS [J].
BURGESS, TE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (04) :341-342
[4]   A STUDY OF THE ETCHING RATE OF SINGLE-CRYSTAL GERMANIUM [J].
CAMP, PR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (10) :586-593
[5]  
COTTON FA, 1962, ADVANCED INORGANIC C, P368
[6]   THE REACTION OF GERMANIUM WITH NITRIC ACID SOLUTIONS .1. THE DISSOLUTION REACTION [J].
CRETELLA, MC ;
GATOS, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (09) :487-496
[7]   ETCHING OF SINGLE CRYSTAL GERMANIUM SPHERES [J].
ELLIS, RC .
JOURNAL OF APPLIED PHYSICS, 1954, 25 (12) :1497-1499
[8]   THE REACTION OF GERMANIUM WITH AQUEOUS SOLUTIONS .1. DISSOLUTION KINETICS IN WATER CONTAINING DISSOLVED OXYGEN [J].
HARVEY, WW ;
GATOS, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (11) :654-660
[9]  
HOLMES PJ, 1962, ELECTROCHEMISTRY SEM, P212
[10]   CONTROLLED ETCHING OF SILICON IN THE HF-HNO3 SYSTEM [J].
KLEIN, DL ;
DSTEFAN, DJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) :37-42